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hitechjb1 said:More about leakage current and leakage power
In a silicon chip, the lowest part is silicon substrate on which 10-100 millions of transistors are deposited (current technology). Above the transistors are 100's millions wire segments in the form of multilayer grid. The metal wires are for getting power from outside, signals in and out the chip, and passing signal around the chip to the transistors.
The bulk of the silicon substrate is connected and typically grounded. Such silicon structure is usually called bulk silicon. This is what silicon chip in the past and down to 130 nm silicon chips are like. Currents also leak through the transistors to the substrate.
From 90 nm and down (some 130 nm are SOI), most of the silicon chips have the silicon body insulated from the substrate, hence the name silicon on insulator (SOI). So the leakage currents through transistors to the substrate are significantly reduced. This is the good part.
BUT the bad news is, ..., the main part of the leakage current in bulk silicon and SOI is due to the internal leakage current through the 10-100 millions transistors. Transistors have p- and n-type. Inside a chip, between the power supply (VDD) and ground, there are 10's millions of transitor paths, made up of some p- and some n-type, and leakage current are constantly flowing through those paths. This is called leakage current, or OFF current (since ideally the path should be off). So the leakage power can be written as V^2 / R, V is voltage (typically VDD), R respresents the equivalent resistance of all those leakage path. In older generation of silicon, these leakage paths and leakage current are relatively small and had not been an issue.
As transistors are getting smaller and smaller (90, 65, 45 nm), and transistor gate oxide thinner and thinner, these leakage currents are getting larger and larger (relative to the normal active current used for switching). And as described in the last post, the "wasteful" leakage current will be larger than the "useful" active current, unless something can be done. So the power for computation relative to leakage power is getting smaller for each generation, and frequency gain per generation will be leveling off.
hitechjb1 said:Possible explanation:
When the CPU is clocked faster (consuming faster), the memory controller is not fast enough to keep pace and provide enough data I/O with the L2 cache running in sync with the processor clock, hence resulting in more cache wait states relative to the memory controller and in turn lower efficiency (the actual bandwidth is still higher, but efficiency which is bandwidth per memory clock is reduced).
Will the revision E0 correct/improve this?
Some links about latest silicon technology, Silicon on Insulator (SOI), Strained Silicon (SS), Dual Stress Liner (DSL)hitechjb1 said:In regular silicon, atoms are spaced apart with certain distance determined by the silicon lattice.
In stained silicon, silicon is deposted onto a substrate (such as silicon germanium) whose atoms are spaced apart in the lattice with larger distance than that in regular silicon lattice. Since atoms tend to align with one another, so the top silicon atoms are stretched or strained to align with the atoms underneath in the stretched lattice.
In strained silicon (lattice), electrons flow with less resistance and up to 70% faster, which in turns can lead to 35% faster chips without scaling down the size of transistors (numbers quoted from IBM).
Strained Silicon (SS) can be built on top of Silicon on Insulator (SOI), the two are not mutually exclusive. Intel, IBM, AMD, ... are building 90 nm chips using both SS and SOI in various ways. IBM called it SSDOI (Strained Silicon Directly on Insulator).
Conventional strained silicon on insulator is referred to as "singly stressed" only. The dual stress liner refers to both "stretched" and "compressed" on NFET and PFET respectively to achieve further speed improvement.
www.cinebench.com said:CINEBENCH is the free benchmarking tool for Windows and Mac OS based on the powerful 3D software CINEMA 4D. The tool is set to deliver accurate benchmarks by testing not only a computer's raw processing speed but also all other areas that affect system performance such as OpenGL, multithreading, multiprocessors and Intel's new HT Technology.
hitechjb1 said:OC Detective said:...
Edit confirmation of the good news.
here is the AMD link referring to this new cpu on socket 939 and specifically how well they run on a Sun Ultra 20
http://www.amd.com/us-en/Corporate/VirtualPressRoom/0,,51_104_543~100324,00.html
(Beer Hunter note there is NO doubling of price!)
and here is the Sun spec which confirms you can use non ECC unbuffered
http://www.sun.com/desktop/workstation/ultra20/specifications.jsp#Processor
Perhaps this is merely a function of a bios update on socket 939s to allow both ECC AND non ECC unbuffered.
...
With your above two links from AMD and SUN, and this link
http://www.amd.com/us-en/assets/content_type/white_papers_and_tech_docs/25759.pdf
I would tend to agree that it is correct to expect that the Opteron 100 can work with non-ECC unbuffered memory and 939 board (non SMP) and the 100 is equivalent to an SH-E6 (00020F71h) which is the 1MB L2 A64 SanDiego and SanDiego based FX.
Further, corollary,
Ref: http://www.amd.com/us-en/Corporate/VirtualPressRoom/0,,51_104_543~100324,00.htmlAMD (Aug 02 said:The new AMD Opteron 100 Series processors with ECC unbuffered memory support offer a compelling price/performance ratio, beginning with Model 144, priced at $125 in 1,000-unit quantities, and scaling to Model 152, priced at $799 in 1,000-unit quantities. Dual-Core AMD Opteron 100 Series processors with ECC unbuffered memory support, ranging from Model 165 at $417 to Model 175 at $530 for 1,000-unit quantities, are expected to be available within 30 days.
I would say the dual core Opterons 165 (rated 1.8 GHz), 170 (rated 2.0 GHz) and 175 (rated 2.2 GHz) would be equivalent to the JH-E6 (00020F32h) which is basically the 2 x 1MB L2 A64 X2 Toledo's.
The lowest rating Opteron 165 (1.8 GHz), priced at $417 per 1000-unit, ... having 2 x 1MB L2, would work with non-ECC unbuffered memory with a 939 motherboard (non SMP). It may be what many people (price/performance) are waiting for.
Don't know how much would be the unit price, but that is close enough to the current 2.0 GHz 3800+ Manchester X2 with 2 x 512KB L2 priced at around $350.