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should i pull the trig on some hch9?

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moho

I wanna title tooo !
Joined
Nov 26, 2004
Location
1337 Leet Street , CO 1337
I just got some 2x4gb hck0 ram I'm running it at 10-11-11-28-1t 1120mhz 1.65v
I am looking at some hch9 2x2gb kits for ~$25. I am gonna want some high MHz ram for benching. If I get a few kits, think I could bin a good set and resell the rest? Is that a good price?
Lmk your thoughts :)
 
Thats a 10 year old article, however it may still hold true, who knows, but I sincerely doubt it. That said, I havent seen anyone else in any forum mention that was needed or made a difference today...who knows though.
 
That's DDR on truly ancient NB based memory controllers, just a touch behind the times.
Got anything for DDR3 and IMCs? What is best changes rapidly, after all.
 
I've heard it from Sam (Tapakah)...I'd trust his judgement, benching wise.
For day to day use, MEH :p

I've seen the difference in 32m times too. Same settings, clocks and wazza and everything, double sided was faster.
 
Never heard of the dude... that said, I dont care if it was God himself.. Benchmarks or I call BS! Ten year old articles and some random bencher means little to MEH! :)

@ OP - Personally, I wouldnt worry about double v single sided. 99.9999999999999999999999999999999% of benchers dont seem to or it would have been mentioned before. I cant imagine the increases are even worth the hassle. However, I have been wrong before. :p
 
Not some random bencher... http://hwbot.org/user/tapakah/

"Samsung D-rev: (K4B2G0846D)
OEM codes: M378B5773DH0 for 2Gb modules, M378B5273DH0 for 4Gb modules.

People usually call these ICs by theis submodification, which is wrong as all other Samsung ICs (should) have the same.
BCH9 and HCH9 stand for 1333C9 1.5V, BCK0 and HCK0 stand for 1600C11 1.5V and HYK0 stand for 1600C11 1.35V JEDEC-rated ICs.
Can almost surely be found on 2400 9-11-11, 2600C10 and 2666C10 rated memory, as well as on ver4.13 Corsair.
MHz/volt scaling is close to linear using same CL value. tRCD and tRP have quite firm walls, usually you will run them even (x-11-11-x maxes out at 1280-1330MHz, x-12-12-x maxes out at 1350-1430MHz and so on).
Average samples should do 1200MHz 9-11-11 and 1300MHz 10-12-12 at 1.65V, while really good stuff will do 1400MHz 10-12-12 under 1.6V."

As for benchmarks, I've seen a few but can't find them now. Ask our local ram guru if you don't buy it. :D
Where's Woomack when you need him? :p
 
Not some random bencher... http://hwbot.org/user/tapakah/

"Samsung D-rev: (K4B2G0846D)
OEM codes: M378B5773DH0 for 2Gb modules, M378B5273DH0 for 4Gb modules.

People usually call these ICs by theis submodification, which is wrong as all other Samsung ICs (should) have the same.
BCH9 and HCH9 stand for 1333C9 1.5V, BCK0 and HCK0 stand for 1600C11 1.5V and HYK0 stand for 1600C11 1.35V JEDEC-rated ICs.
Can almost surely be found on 2400 9-11-11, 2600C10 and 2666C10 rated memory, as well as on ver4.13 Corsair.
MHz/volt scaling is close to linear using same CL value. tRCD and tRP have quite firm walls, usually you will run them even (x-11-11-x maxes out at 1280-1330MHz, x-12-12-x maxes out at 1350-1430MHz and so on).
Average samples should do 1200MHz 9-11-11 and 1300MHz 10-12-12 at 1.65V, while really good stuff will do 1400MHz 10-12-12 under 1.6V."

As for benchmarks, I've seen a few but can't find them now. Ask our local ram guru if you don't buy it. :D
Where's Woomack when you need him? :p
nice. Their pretty cheap i bought a kit, hopefully ill get some more.
 
If you are comparing the same capacity then double side will be faster just because higher density IC ( read single side ) needs looser sub timings but I don't think it will change performance in any noticable way as main difference is almost only in tRFC.
So yes 4GB double side sticks like Hynix CFR will be faster than 4GB single side MFR sticks but difference is barely visible. The same about newer Samsungs.
On the other hand most 4Gb IC are overclocking higher especially if you look at Samsung so with chance for higher clock you also get chance for higher performance ( if you set memory right ).

In DDR3 it's more like bank addressing that makes some difference but really it can change more in servers with ECC ram and rank x4/x8 memory.

I doubt that all around can just pick if they want single or double side memory. Most just order RAM under some name and brand and they get something quite random. Actually new kits are almost only on 4Gb IC no matter if it's Samsung, Hynix, Micron, Nanya or SpecTek.

I have no luck to Samsung IC. All kits that I had based on HCH9 or HYK0 couldn't run stable @2600+. No matter if it was 2133 CL9-CL11 or 2400 9-11-11, max stable for all was ~2500 CL9 or CL10 and depends from kit 1.65-1.85V.
Just because of random chance for OC I like Hynix IC more especially that MFR are scalling pretty good at CL10 and usually need lower voltage than Samsung at high clocks.
 
Apparently it's more of a 2d thing, my bad...but thanks for stopping by man.

Hynix MFR isn't looking half bad though lately, lots of real fast kits sporting those ic's.
Isn't the 3000mhz cl12 Vengeance using them too? :p
 
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