Cowbox X .... you're welcome.
CPL.Luke ... I'm not sure what you are trying to say, that is exactly what they are currently doing. Moore, Schokley (not the original inventor of the transistor - but the supervisor), and others observed that since the creation of the IC - all of our current silicon transistors work on the basic PN junction. (see previous posted article for summary.
Basically, all transistors have a Base, Collector and Emitter and in an IC or any semiconductor it uses Silicon (pure crystal grown, sliced, baked) since it is farily cheap and can be doped with other substances which converts it from a non-conductor to a conductor with the simple application of power (apply voltage).
So, you have a large sheet of silicon which is doped with different atoms of tantalum, gallium, boron, arsenic, etc, and where these impurities come together to create either a "P"ositive junction or an "N" type - they create a transistor ON the silicon. You then layer them to increase density and to provide a paths, power, ground, etc.
Ok... this is getting way too long winded and my memory of micro electonics is spotty, see the following:
http://science.howstuffworks.com/diode4.htm
http://science.howstuffworks.com/fr...chnik.uni-erlangen.de/lehre/mm/html/start.htm
As many have noted, and posted above... yes we are approaching the end. There is a real physical limit to how small you can create wire traces... a minimum 1 atom, actually more like 21 atoms as well as the very real problem of how to create photolith masks when the light being used has a longer wave length than the traces being created.
i.e. 65nm process is shorter than the standard UV light wave length - 2010 could be crunch time for one big hurdle.
ugh... must sleep.