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Anyone have DDR5 Samsung subtimings I can use?

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I tried separate sticks, left one is bad, errored after 1min. Right one works Karhu 2h+, Coverage 8000%. Temperature 56°C. DDR4 Samsung B-Die was at 54°C, so DDR5 is not that worse.
 
I got Neo 6000 30-38-38 yesterday. Here right stick is bad, it also errors out in second minute. I always arrange them by serial number, lower number in 2nd slot, that way I don't have trouble knowing which is which.

But it's not bad meaning it doesn't work, it just isn't stable on 6000. So far it seems 5600 is stable (30min). I have to check the 6000 CL36 kit's bad stick again, if 5600 is stable.

I don't even have to say I am very disappointed in G.Skill's QC. I am 100% sure they don't check every kit for stability on rated speed. Because my 2 bad sticks error out between 1min and 2min.
DDR4 was way better, 6 out of 6 kits were problem free, 3 kits are in use to this day.


Board I get ASUS Strix X670E-F at the end of this week. You need to have nerves of steel for this Aorus Master, 30min to change memory settings (or fan profiles) in BIOS is nothing unusual. And it's only when RAM is hot, and it takes a lot of time to cool down, at least an hour. But BIOS is normal fast only on cold boot or if computer idles overnight and I restart it.
Maybe just my board is bad. Actually that would make much more sense than if every board is like this.
 
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I have to test further, but so far (25min+ on the worse stick) it seems 1.36V will be enough for Neo kit to be stable. Even the better stick actually BSOD-ed after 1h on 1.35V, so there is not much difference between both sticks.

It's probably the same for 6000 CL36 worse stick, one stick simply needs more voltage. But there the better stick works 1.31V and that will already be 0.05V difference. I'm not happy with that, but I don't think it's worth RMA for that, I can get a similar thing again.
I did get this from the better Samsung stick:
6000 36-36-36-96 1.31V
6000 34-34-34-96 1.34V
6000 32-32-32-96 1.35V
So with two sticks 6000 CL34 should certainly be possible with up to 1.40V, maybe even CL32. Still a lot of work to do even on XMP/EXPO.

If I'm already at XMP, Samsung kit doesn't go even a little below XMP, all these no luck (and this is with better stick at 1.35V and it was stable 5h+ on 1.31V):
tRRDS/tRRDL/tFAW - 8/8/32 (only works 15/8/32)
tWR - 84 (only works 90)
tRTP - 10 (only works 12)
tRFC - 870 (only works 884)
tRC - 126 (only works 132)
tWTRL - 28 (only works 30)
tRAS - 90 (only works 96)


As far as my little experience with different boards, I did go from Z490 to Z590 and noticed it needed +0.01-0.02V. And especially with X570 which needed +0.07-0.08V more than Z590 and tRCDRD 16 instead of 14.
So board certainly can make a difference. But still, G.Skill should stop making such tight bins that board difference even comes into play. It was same with 4000 16-16-16-36 1.40V, was stable only on 1.40V and not on 1.39V.
Before these 3 kits 0.05V leeway was nothing out of the ordinary. For example 3600 14-15-15 1.45V worked on 1.37V. This is better for manufacturer (way less RMA) and for the customer (way less trouble).


Also about temperature between Samsung and Hynix, I expected lower from Hynix. If I didn't read it somewhere else, then at least here:
Hynix IC overclocks high and produces less heat than the Samsung IC, so it promises good results.
But there really isn't much difference, Samsung was at 55-60°C, Hynix max for now 57.5°C, but that was only 5600 and only 20min. I can safely say it's not more than degree or two difference.

Maybe this is why I need to have higher voltage anyway, G.Skill for sure tests them in climated room on mobo outside the case.


EDIT: I also figured how to make BIOS faster in little time. You power off completely and after a minute it is fast enough that you can set anything you want in 1 minute or less. And after 2 minutes power down it only stutters here and there, but otherwise mouse and keyboard are already normal fast.
 
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