Science time!
With the introduction of 14nm FET sizes, we kinda entered a new realm of material breakdown. We are very close to the point where electron drift (
the instantaneous moment when electronics can freely float between atoms) will cause erratic behavior inside the materials. Now some materials account for this behavior and Semiconductors like to exploit it. However when the behavior becomes so intense, it becomes very detrimental affect to the CPU. This can cause lower resistance in gates, creating current leakage or it might cause the very well defined interconnects that must have a specific timing requirement to move faster (memory speed mismatch). There are a lot of things that can start to happen.
For more information on these challenges you should read this article:
http://semiengineering.com/interconnect-challenges-grow-3/
But the long and short of it is this: Expect clocks to start to stabilize around a bell curve, influence of temperatures will not matter. The only way to circumvent this is by moving to newer materials.
And for those that really care: Maths
https://web.stanford.edu/class/ee311/NOTES/InterconnectScalingSlides.pdf